Terahertz detectors arrays based on orderly aligned InN nanowires

Terahertz detectors arrays based on orderly aligned InN nanowires

Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present wor...

Nanogenerators based on vertically aligned InN nanowires.

Piezoelectric nanogenerators (NGs) based on vertically aligned InN nanowires (NWs) are fabricated, characterized, and evaluated. In these NGs, arrays of p-type and intrinsic InN NWs prepared by plasma-assisted molecular beam epitaxy (MBE) demonstrate similar piezoelectric properties. The p-type NGs show 160% more output current and 70% more output power product than the intrinsic NGs. The featu...

InN nanocrystals, nanowires, and nanotubes.

Indium nitride has attracted increasing attention in the last few years because of its properties of potential value in optoelectronic devices and other technologies. There have been several efforts to prepare InN nanostructures, but the results reported are not altogether complete and satisfactory. Nanocrystals of InN have been produced by the reaction of InCl3 and Li3N at 250 8C, but the mate...

Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting ...